Tool Talk and Workshop with Bruker

Bruker LEPTOS software for high-resolution x-ray diffraction (HRXRD) of epitaxial thin films

WHERE AND WHEN

Wednesday, March 4th, 2020
10:00am–12:00pm Demonstration and HRXRD background
1:00pm–4:00pm Software workshop (Please bring laptops)
12-0168, MIT.nano (basement level)
60 Vassar Street (rear)
Cambridge, MA 

 

REGISTER

 

This workshop will focus on the use of HRXRD for detailed structural analysis of both simple and complex epitaxial structures (single, multilayer, and superlattices) using high-resolution diffraction instrumentation and software such as Bruker's LEPTOS program. You will learn methods for setting up the HRXRD experiment and collecting and analyzing data to get the most precise results from thin-film structures.

Benjamin Krueger, Bruker Applications Scientist, will describe the use of LEPTOS software to analyze both in-plane and out-of-plane strain, composition, and defect density of epitaxial thin films on single-crystal substrates. The Bruker D8 Discover high-resolution XRD instrument in the Materials Research Laboratory (MRL) X-ray facility will be utilized to provide a short demonstration prior to the software workshop. 

Features of Bruker LEPTOS include:

• Joint evaluation of multiple XRR, HRXRD, GISAXS and RS measurements.

• Advanced X-ray scattering theories and numerical methods for estimation, simulation, and fitting of data in direct and reciprocal space.

• Naturally integrated processing of the 1- and 2-dimensional data sets measured by point, line, and two-dimensional detectors.

• Universal sample model editor for parameterizing any type of thin-film and bulk samples.

• Comprehensive and extendable material database covering all 230 crystallographic space groups.

• Area mapping tool for display and evaluation of the measurements performed over large sample areas.

• Advanced sin²ψ method for Residual Stress analysis of 1-D and 2-D data, as well as the multiple (hkl) method of evaluating the stress gradient in polycrystalline coatings.