Atomic Layer Deposition:
Pioneering Research with Atomic-Scale Precision
12-0168, MIT.nano (basement level), Building 12
60 Vassar Street (rear)
Cambridge, MA
As devices miniaturize and become more powerful, surface engineering and control of material properties at the atomic scale become increasingly important. Atomic Layer Deposition (ALD) is one technique that provides this level of control. At the turn of the century, this gas-phase deposition technique enabled critical breakthroughs in the semiconductor industry and is now a key process in the fabrication of all semiconductor devices, from CPUs to DRAM components. Almost 2 decades later, ALD is enabling groundbreaking innovations to take place in the growing fields of energy storage (batteries) and energy conversion (solar cells and fuel cells).
In this talk, Arradiance experts will dive into the fundamentals of ALD and what separates this deposition technology from other vapor phase techniques. We will explore how ALD technology has enabled pioneering research within the semiconductor industry and the exciting new research of ALD applied to energy storage and energy conversion. This includes interface engineering for next-generation lithium-ion battery technology, depositing nanoparticles, down to single atoms, to increase catalytic activity in fuel cells and enabling record conversion efficiency for perovskite-silicon solar cell technology.
Please join us in exploring the exciting world of nanoscale surface engineering and the important role it plays in the future of materials engineering.